Si3480
6. Ordering Guide
Ordering Part Number
Si3480-A01-GM
Si3480 Kit
Description
Power management controller
An eight-port evaluation kit with the Si3480, two
Si3452 controllers and the Si3500 for generating
Package Information
20 pin 4x4 mm QFN
RoHS compliant
Evaluation Board
the 3.3 V supply from the PoE supply
Notes:
1. Add “R” to the part number to denote tape and reel option (Si3480-A01-GMR)
2. The ordering part number is not the same as the device mark. See “9. Top Marking: 20-Pin QFN” for device marking
information.
Rev. 1.0
9
相关PDF资料
SI5017-EVB BOARD EVALUATION FOR SI5017
SI5018-EVB BOARD EVALUATION FOR SI5018
SI5020-EVB BOARD EVALUATION FOR SI5020
SI5023-EVB BOARD EVALUATION FOR SI5023
SI5110-EVB BOARD EVALUATION FOR SI5110
SI5320-EVB BOARD EVALUATION FOR SI5320
SI5321-EVB BOARD EVALUATION FOR SI5321
SI5364-EVB BOARD EVALUATION FOR SI5364
相关代理商/技术参数
SI3481DV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI3481DV_06 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI3481DV-T1-E3 功能描述:MOSFET 30V 5.3A 0.048Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3481DV-T1-GE3 功能描述:MOSFET 30V 5.3A 2.0W 48mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
Si3482-A01-GM 功能描述:热插拔功率分布 12/24/48-prt Pw Mngr Si3452/3PSE Prt Ctrl RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube
SI3482-A01-GMR 功能描述:电源开关 IC - POE / LAN 12/24/48-port Power Manager RoHS:否 制造商:Fairchild Semiconductor 开关数量:Single 开关配置:SPST 开启电阻(最大值):7.3 Ohms 串话: 带宽: 开启时间(最大值):13 ns 关闭时间(最大值):20 ns 切换电压(最大): 工作电源电压:8 V to 26 V 最大工作温度:+ 125 C 安装风格:Through Hole 封装 / 箱体:TO-220F-6
SI3483CDV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
Si3483CDV-T1-E3 功能描述:MOSFET 30V 8.0A 4.2W 34mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube